MT53E1G32D2FW-046 vs MT53E1G32D2FW-046 AUT:B 对比

详细并排对比 MT53E1G32D2FW-046 出自 Micron Technology 和 MT53E1G32D2FW-046 AUT:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E1G32D2FW-046 MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron

MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron

MT53E1G32D2FW-046 ✓ 量产中
Micron Technology
MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron

MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron

MT53E1G32D2FW-046 AUT:B ✓ 量产中

规格对比

参数 MT53E1G32D2FW-046 MT53E1G32D2FW-046 AUT:B
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $295.93 $273.51
存储器类型 Mobile LPDDR4X SDRAM SDRAM - Mobile LPDDR4X
存储容量 32 Gbit (4 GB) 32 Gbit (4 GB)
存储组织 1G x 32 (dual-die, 2 x 16-bit channels) x32 Parallel
接口 Parallel Parallel
Clock Frequency 2133 MHz (2.133 GHz) 2.133 GHz
数据速率 4266 Mb/s per pin —
Access Time 3.5 ns —
Write Cycle Time 18 ns —
VDDQ I/O Voltage 0.6 V —
封装 200-TFBGA (10 x 14.5 mm) 200-TFBGA (10 mm x 14.5 mm)
Ball Diameter 0.40 mm (SMD balls) —
安装类型 Surface Mount Surface Mount
Operating Temperature (AUT variant) -40C to +125C —
Die Revisions :A (FBGA D9ZQX) and :B (FBGA D8CJB) —
特性 Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL Rating [DATA_NEEDED: moisture sensitivity level] —
Access Time / Clock Cycle — 3.5 ns
工作温度 — -40C to +125C
Temperature Grade — Automotive (AUT)
Self-Refresh — Auto self-refresh
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Write Leveling — Yes
ZQ Calibration — Yes
VDDQ Supply Voltage — [DATA_NEEDED: VDDQ supply voltage]
VDD Supply Voltage — [DATA_NEEDED: VDD supply voltage]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]

数据手册与资源

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